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2N7002S Complex FET 60 250mA/0.25A SOT-363/SC70-6 marking 702S servo motor control switch application
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 250mA/0.25A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 2.5Ω@ VGS = 4.0 V, ID = 100 mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1~2.5V |
| 耗散功率Pd Power Dissipation | 350mW/0.35W |
| Description & Applications | Dual N-Channel Enhancement MOS FET APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE * Small surface mounting type * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. |
| 描述与应用 | 双N沟道增强MOS FET 应用 *伺服电机控制。 *功率MOSFET栅极驱动器。 *其他开关应用。 特写 *小型表面贴装型 *高密度电池设计的低RDS（ON）。 *适用于高堆积密度。 *坚固，可靠。 *高饱和电流能力。 *电压小信号开关控制。 |
