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2SC3324-GR NPN Transistors(BJT) 120V 100mA/0.1A 100MHz 200~400 300mV/0.3V SOT-23/SC-59 marking CBG radio low power amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
120V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
120V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
300mV/0.3V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsNPN Silicon epitaxial Transistors Audio frequency low power amplifier applications Excellent hFE linearity High voltage Low noise High hFE small package Complementary to 2SA1312
描述与应用NPN硅外延晶体管 音频频率低功耗放大器应用 优秀HFE线性 高压 低噪音 高HFE 小包装 互补型2SA1312
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