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2SD2240-S NPN Transistors(BJT) 150V 100mA/0.1A 150MHz 185~330 1V SOT-523/SC-75 marking PS high breakdown voltagelow noise amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
150V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
150V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
185~330
管压降VCE(sat)
Collector-Emitter Saturation Voltage
1V
耗散功率Pc
Power Dissipation
125mW/0.125W
Description & ApplicationsSilicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Features High collector to emitter voltage VCEO. Low noise voltage NV. and automatic insertion through the tape packing
描述与应用NPN硅外延平面型 对于高击穿电压的低频和低噪声放大 特点 高集电极发射极电压VCEO。 低噪声电压NV。 通过自动插入磁带包装
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