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2SK1646 MESFET-N channel 6V 45mA-60mA -0.5V -- -5V SOT-143 marking IW5 RF application/C to X-band local oscillator and amplifier

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Product description
最大源漏极电压Vds
Drain-Source Voltage
6V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-5V
漏极电流(Vgs=0V)IDSS
Drain Current
45mA-60mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.5V -- -5V
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & ApplicationsN-Channel GaAs MESFET. For C to X-band Local Oscillator and Amplifier. Features .Ideal for use in C to X-band local oscillator and amplifier. .The chip surface is covered with the highly reliable protection film. .Super miniaturized plastic-mold package (CP4). .Automatic surface mounting is available
描述与应用砷化镓N沟道MES场效应管 ,用于C X-波段本地振荡器和放大器, 非常适于用于C X波段的本地振荡器和放大器 ,该芯片的表面覆盖有高度可靠的保护膜 ,超小型塑料模具封装(CP4), 自动表面安装.
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