3SK228 MESFET-N channel 12V 10mA-32mA -1.1V SOT-143 marking XR RF application|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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3SK228 MESFET-N channel 12V 10mA-32mA -1.1V SOT-143 marking XR RF application

Model：3SK228
Mark / screen / code / typing：XR
Manufacturer：
Date Code：05+ 05+
Package：SOT-143/MPAK-4
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	12V
栅源极击穿电压V(BR)GS Gate-Source Voltage	-6V
漏极电流(Vgs=0V)IDSS Drain Current	10mA-32mA
关断电压Vgs(off) Gate-Source Cut-off Voltage	-1.1V
耗散功率Pd Power Dissipation	150mW/0.15W
Description & Applications	GaAs DUAL-GATE FET. Applications: UHF TV TUNER RF AMPLIFIER.
描述与应用	砷化镓双栅场效应管. 应用: 超高频电视调谐器射频放大器.

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