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APM2301AAC MOSFET P-Channel -20V -3A 0.072ohm SOT-23 marking A01 battery-powered equipment notebook battery management
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | -3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.072Ω @-3A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.5--1V |
| 耗散功率Pd Power Dissipation | 830mW/0.83W |
| Description & Applications | • 20V/-3A , RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) |
| 描述与应用 | •20V/-3A， RDS（ON）=72mΩ（典型值）@ VGS=-4.5V RDS（ON）=98mΩ（典型值）@ VGS=-2.5V •超级高密度电池设计 可靠耐用 对无铅要求的可用（RoHS标准） |
