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AT-30511 NPN Transistors(BJT) 11V 8 mA 5GHz 70~300 1V SOT-143 marking 305K
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 11V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 5.5V |
| 集电极连续输出电流IC Collector Current(IC) | 8 mA |
| 截止频率fT Transtion Frequency(fT) | 5GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 70~300 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 1V |
| 耗散功率Pc Power Dissipation | 100mW/0.1W |
| Description & Applications | Low Current, High Performance NPN Silicon Bipolar Transistor Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011: 0.9 dB NF, 13 dB GA AT-31033: 0.9 dB NF, 11 dB GA • Characterized for End-OfLife Battery Use (2.7 V) • SOT-143 SMT Plastic Package • Tape-And-Reel Packaging Option Available |
| 描述与应用 | 低电流，高性能 NPN硅双极晶体管 特点 •高性能双极晶体管低电流，低电压操作而优化 •900兆赫绩效： AT-31011：0.9分贝，13分贝（NF）GA AT-31033：0.9分贝，11分贝（NF）GA •其特点为的最终OfLife电池使用（2.7 V） •采用SOT-143封装的SMT塑料包装 •磁带和卷轴包装选项可用 |
