EMB2 PNP+PNP Complex Bipolar Digital Transistor -50V -0.1A 0.15W R1=R2=47KΩ SOT-563/EMT6 marking B2 switching inverting interface driver circuit|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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EMB2 PNP+PNP Complex Bipolar Digital Transistor -50V -0.1A 0.15W R1=R2=47KΩ SOT-563/EMT6 marking B2 switching inverting interface driver circuit

Model：EMB2
Mark / screen / code / typing：B2
Manufacturer：
Date Code：05+
Package：SOT-563/EMT6
Standard Package：8000
Min Order：100

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Product description

V(BR) CBO Collector-Base Voltage	-50V
V(BR) CEO Collector-Emitter Voltage	-50V
Collector Current(IC)	-100MA
Input Resistance(R1)	47KΩ
Base-Emitter Resistance(R2)	47KΩ
Base-Emitter Input Resistance Ratio (R1/R2)	1
DC Current Gain(hFE)
Transtion Frequency(fT)	250MHZ
Power Dissipation （Pd）	0.15W
Description & Applications	1) Two DTA144E chips in a EMT package. 2) Dual PNP silicon transistor (each with two built in resistors)
Technical Documentation Download	Read Online

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Commodity Description	Supplier model	Manufacturer	Explain	Stock
EMB3 PNP+PNP Complex Bipolar Digital Transistor -50V -0.1A HEF=100~600 R1=4.7KΩ 0.15W SOT-563/EMT6 marking B3 switching inverting interface driver circuit	EMB3 Mark：B3 Package：SOT-563/EMT6	-	Batch number：0333+ 05+NOPB5K	29000 Min Order:100
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