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FDN337N MOSFET N-Channel 50V 2.2A SOT-23/SC-59 marking 337 low on-resistance/ultra highspeed switch/2.5Vdriver
| 最大源漏极电压Vds Drain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 2.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.065Ω/Ohm @2.2A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4-1V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | 2.2 A, 30 V, RDS(ON = 0.065 W @ VGS = 4.5 V RDS(ON)= 0.082 W @ VGS= 2.5 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOT TM3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability. |
| 描述与应用 | 行业标准外形SOT-23表面贴装 包装使用专有SuperSOT 的TM3设计为 卓越的热性能和电气能 高密度电池设计极低的RDS（ON） 卓越的导通电阻和最大DC电流能力 |
