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HAT1053M-EL MOSFET P-Channel -20V -5.5A 0.034ohm SOT-163 marking 1053 low on-resistance low drive current

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
-5.5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.034Ω @-3A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.4--1.4V
耗散功率Pd
Power Dissipation
2W
Description & ApplicationsFeatures • Low on-resistance • Low drive current • High density mounting • 2.5 V gate drive device
描述与应用•低导通电阻 •低驱动电流 •高密度安装 •2.5 V门驱动装置
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