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IRF5810TR Complex FET -20V -2.9A SOT-163/SOT23-6 marking K6 ultra low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-12V
最大漏极电流Id
Drain Current
-2.9A
源漏极导通电阻Rds
Drain-Source On-State Resistance
135mΩ@ VGS = -2.5V, ID = -2.3A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45~-1.2V
耗散功率Pd
Power Dissipation
960mW/0.96W
Description & ApplicationsUltra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
描述与应用超低导通电阻 双P沟道MOSFET 表面贴装 可在磁带和卷轴 低栅极电荷
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