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MMFT1N10ET1 MOSFET N-Channel 100V 100mA/0.1A SOT-223/SC-73/TO261-4 marking 1N10 fast switch/low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | 100V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.25Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2-4.5V |
| 耗散功率Pd Power Dissipation | 800mW/0.8W |
| Description & Applications | Medium Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS E−FET SOT−223 for Surface Mount This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, dc−dc converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. •Silicon Gate for Fast Switching Speeds •Low RDS(on) 0.25 Ω max •The SOT–223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage totheDie • Available in 12 mm Tape and Reel Use MMFT1N10ET1 to order the 7 inch/1000 unit reel. Use MMFT1N10ET3 to order the 13 inch/4000 unit reel. |
| 描述与应用 | 中等功率场效应晶体管 N沟道增强模式 硅栅TMOS E-FET？ SOT-223表面贴装 这种先进的E-FET是一个TMOS中等功率MOSFET 设计能够承受高能量的雪崩和减刑 模式。这种新型高效节能设备，还提供了一个漏 - 源 二极管具有快速恢复时间。专为低电压，高转速 开关电源的应用，DC-DC转换器和PWM 马达控制，这些设备特别适合于桥 电路二极管的速度和换向安全工作领域 关键，并提供额外的安全边缘对意外的电压 瞬变。该设备采用SOT-223包 专为中等功率表面贴装应用。 •硅栅快速开关速度 •低的RDS（on） 0.25Ω最大 •SOT-223包装可以使用波或回流焊接。所形成的线索在焊接热应力吸收，消除可能的伤害totheDie •可在12毫米编带和轴 使用MMFT1N10ET1到责令7 inch/1000的单卷轴。 使用MMFT1N10ET3责令13 inch/4000的单位卷轴。 |
