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MSB1218A PNP transistors(BJT) -45V -100mA/-0.1A 210~340 -500mV/-0.5V SOT-323/SC-70 marking BR amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-45V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−45V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
直流电流增益hFE
DC Current Gain(hFE)
210~340
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
150mW/0.15W
Description & ApplicationsPNP silicon general purpose amplifier Transistor Feature High hFE Low VCE(sat)
描述与应用PNP硅通用晶体管放大器 特点 高HFE 低VCE(饱和)
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