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MTD2955VT4 MOSFET P-Channel 60V 1.2A 0.185ohm SOT-252 marking 955V

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-12A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.185Ω @6A,10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
2.0-4.0V
耗散功率Pd
Power Dissipation
2.1W
Description & ApplicationsFeatures • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Pb−Free Packages are Available
描述与应用•雪崩能量 •IDSS和VDS(上) 指定高温 •无铅包可用
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