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NDC7001C Complex FET 60V/-60V 510mA/-340mA SOT-163/SOT23-6/SSOT-6 marking 01C switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
60V/-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V/20V
最大漏极电流Id
Drain Current
510mA/-340mA
源漏极导通电阻Rds
Drain-Source On-State Resistance
4Ω@ VGS =4.5V, ID =350mA/7.5Ω@ VGS =-4.5V, ID =-250mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
1~2.5V/-1~-3.5V
耗散功率Pd
Power Dissipation
800mW/0.8W
Description & ApplicationsDual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply applications. Features High saturation current • High density cell design for low RDS(ON) • Proprietary SuperSOT –6 package: design using copper lead frame for superior thermal and electrical capabilities
描述与应用双N和P沟道增强型场效应晶体管 概述 这些双N&P沟道增强型场效应晶体管都采用飞兆半导体专有的,高细胞密度,DMOS技术。这非常高密度工艺已旨在最大限度地减少通态电阻,提供坚固可靠的性能和快速切换。在这些设备特别适合于低电压,低电流,开关,电源中的应用。 特点 高饱和电流 •高密度电池设计的低RDS(ON) •专有SuperSOT-6包装设计采用铜引线框架的卓越热和电气性能
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