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NTR1P02T1 MOSFET P-Channel -20V -2.4A 0.07ohm SOT-23 marking P2 low on-resistance 1.8V drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		8V
最大漏极电流Id
Drain Current		-2.4A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.07Ω @-1.6A,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.40--1.5V
耗散功率Pd
Power Dissipation		730mW/0.73W
Description & ApplicationsFeatures • Leading −20 V Trench for Low RDS(on) • −1.8 V Rated for Low Voltage Gate Drive • SOT−23 Surface Mount for Small Footprint • Pb−Free Package is Available
描述与应用•领导-20 V沟道低的RDS（on） •-1.8 V额定低电压栅极驱动 •SOT-23表面贴装小尺寸 •无铅包装是可用
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