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NTR1P02T1 MOSFET P-Channel -20V -2.4A 0.07ohm SOT-23 marking P2 low on-resistance 1.8V drive
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -2.4A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.07Ω @-1.6A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.40--1.5V |
| 耗散功率Pd Power Dissipation | 730mW/0.73W |
| Description & Applications | Features • Leading −20 V Trench for Low RDS(on) • −1.8 V Rated for Low Voltage Gate Drive • SOT−23 Surface Mount for Small Footprint • Pb−Free Package is Available |
| 描述与应用 | •领导-20 V沟道低的RDS（on） •-1.8 V额定低电压栅极驱动 •SOT-23表面贴装小尺寸 •无铅包装是可用 |
