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PHD3055E MOSFET N-Channel 60V 10.3A TO-252/D-PAK marking PHD3055E avalanche energy/Fast switching
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 10.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.05Ω/Ohm @10300mA，10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 3.3W |
| Description & Applications | TrenchMOS™ standard level FET N-channel standard level field-effect power transistor in a plastic package using TrenchMOS™1 technology Fast switching Low on-state resistance. |
| 描述与应用 | TrenchMOS标准水平FET N沟道标准水平场效应功率晶体管在一个塑料包装使用 的TrenchMOS™1技术 快速开关 低通态电阻 |
