RN2911FE PNP+PNP Complex Bipolar Digital Transistor -50V -100mA HEF=120~400 R1=10KΩ 100mW/0.1W SOT-563/ES6 marking YM switching inverting interface driver circuit|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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RN2911FE PNP+PNP Complex Bipolar Digital Transistor -50V -100mA HEF=120~400 R1=10KΩ 100mW/0.1W SOT-563/ES6 marking YM switching inverting interface driver circuit

Model：RN2911FE
Mark / screen / code / typing：YM
Manufacturer：
Date Code：10+ROHS 12+32krohs
Package：SOT-563/ES6
Standard Package：4000
Min Order：10

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Product description

V(BR) CBO Collector-Base Voltage	-50V
V(BR) CEO Collector-Emitter Voltage	-50V
Collector Current(IC)	-100MA/0.1A
Input Resistance(R1)	10KΩ
Base-Emitter Resistance(R2)
Base-Emitter Input Resistance Ratio (R1/R2)
DC Current Gain(hFE)	120~400
Transtion Frequency(fT)	200MHZ
Power Dissipation （Pd）	0.1W
Description & Applications	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Technical Documentation Download	Read Online

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