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RTE002P02F MOSFET P-Channel -20V 200mA 1.0ohm SOT-523 marking TW low on-resistance 2.5V drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		12V
最大漏极电流Id
Drain Current		-0.2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		1.0Ω @-200mA,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.7--2.0V
耗散功率Pd
Power Dissipation		150mW/0.15W
Description & ApplicationsFeatures Low On-resistance. Small package (EMT3). 2.5V drive.
描述与应用低导通电阻。 小型封装（EMT3）。 2.5V驱动器
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