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SI3552DV Complex FET 30V/-30V 2.5A/-1.8A SOT-163/SOT23-6/TSOP-6 marking 52

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Product description
最大源漏极电压Vds
Drain-Source Voltage
30V/-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V/20V
最大漏极电流Id
Drain Current
2.5A/-1.8A
源漏极导通电阻Rds
Drain-Source On-State Resistance
175mΩ@ VGS =4.5V, ID =2A/360mΩ@ VGS =-4.5V, ID =-1.2A
开启电压Vgs(th)
Gate-Source Threshold Voltage
1V/-1V
耗散功率Pd
Power Dissipation
1.15W
Description & ApplicationsN- and P-Channel 30-V (D-S) MOSFET
描述与应用N沟道和P-通道 30-V(D-S)的MOSFET
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