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SI5513DC Complex FET 20V/-20V 3.1A/-2.1A 1206-8/vs-8 marking EB

Model：SI5513DC
Mark / screen / code / typing：EB
Manufacturer：
Date Code：05+
Package：1206-8/vs-8/SOT23-8
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	20V/-20V
最大栅源极电压Vgs(±) Gate-Source Voltage	12V/12V
最大漏极电流Id Drain Current	3.1A/-2.1A
源漏极导通电阻Rds Drain-Source On-State Resistance	134mΩ@ VGS =2.5V, ID =2.3A/260mΩ@ VGS =-2.5V, ID =-1.7A
开启电压Vgs（th） Gate-Source Threshold Voltage	0.6~1.5V/-0.6~-1.5V
耗散功率Pd Power Dissipation	1.1W
Description & Applications	Complementary 20-V (D-S) MOSFET
描述与应用	互补的 20-V（D-S）的MOSFET

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