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TPC6002 MOSFET N-Channel 30V 6A SOT-163/SOT23-6/VS-6 marking S2B fast switch/low on-resistance

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current6A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.03Ω/Ohm @3A,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage1.3-2.5V
耗散功率Pd Power Dissipation2.2W
Description & ApplicationsNotebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA)
描述与应用笔记本电脑应用 便携式设备的应用 •低漏源导通电阻RD(ON)= 22mΩ(典型值) •高正向转移导纳:| YFS|=15 S(典型值) •低漏电流IDSS= 10μA(最大)(VDS=20 V) •增强模式:VTH =0.5至1.2 V(VDS=10V,ID=200μA)
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