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TPC6102 MOSFET P-Channel -30V -4.5A 60mohm SOT-163 marking S3B portable equipment application low leakage current low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -4.5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 60mΩ@ VGS = -10V, ID = -2.2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.8~-2.0V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U-MOSII) NOTEBOOK PC PORTABLE EQUIPMENTS APPLICATIONS Low drain-source on resistance High forward transfer admittance Low leakage current Enhancement-model |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS型（U-MOSII） 笔记本电脑 便携式设备应用 低漏源电阻 高正向转移导纳 低漏电流 增强模型 |
