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TPC8212 DOUBLE N-CHANNEL MOSFET 30V 6A SM8 MARKING TPC8212 High-speed switching
| Vds Drain-Source Voltage |
30V |
| Vgs(±) Gate-Source Voltage |
±20V |
| Id Drain Current |
6A |
| Rds Drain-Source On-State Resistance |
16mΩ~21mΩ VGS = 10 V , ID = 3 A |
| Vgs（th） Gate-Source Threshold Voltage |
1.1V~2.3V VDS = 10 V, ID = 1 mA |
Power Dissipation |
0.75W |
| Description & Applications |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable-Equipment Applications
• Small footprint due to small and thin package
• High-speed switching
• Small gate charge: QSW = 5.5 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.)
• High forward transfer admittance: |Yfs| =14 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
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