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TPC6101 MOSFET P-Channel -20V -4.5A 0.048ohm SOT-163 marking S3A portable equipment application low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
-4.5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.048Ω @-2.2A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.5--1.2V
耗散功率Pd
Power Dissipation
2.2W
Description & ApplicationsNotebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement-model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA)
描述与应用笔记本电脑应用 便携式设备的应用 低漏源导通电阻RDS(ON)= 48mΩ(典型值) 高正向转移导纳:| YFS|= 8.2 S(典型值) 低漏电流:IDSS= -10μA(最大)(VDS=-20 V) 增强模式:VTH =-0.5至-1.2 V(VDS= -10 V,ID= -200μA)
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