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UP0421NGOL NPN+NPN Complex Bipolar Transistor 50V 0.1A HEF=80~400 SOT-563 marking FK switch and digital circuit application

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Product description

V(BR) CBO

Collector-Base Voltage

 50V

V(BR) CEO

Collector-Emitter Voltage

 50V
Collector Current(IC)  100MA
Input Resistance(R1)  4.7KΩ
Base-Emitter Resistance(R2)  47KΩ
Base-Emitter Input Resistance Ratio (R1/R2)  0.1
DC Current Gain(hFE)  80~400
Transtion Frequency(fT)  150MHZ
Power Dissipation (Pd) 0.125W
Description & Applications  * Silicon NPN epitaxial planar type
* For switching 
* For digital circuits
* Two elements incorporated into one package (Transistors with built-in resistor)
*Reducation of the mounting area and assembly cost by one half
* UNR221N × 2
Technical Documentation Download Read Online
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