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SI2333DS-T1 MOSFET P-Channel -20V -4.7A 0.031ohm SOT-23 marking E3 power MOSFET

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		8V
最大漏极电流Id
Drain Current		-4.7A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.031Ω @-4.7A,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.4V-1.0V
耗散功率Pd
Power Dissipation		1.25W
Description & ApplicationsFEATURES TrenchFET Power MOSFET
描述与应用功率MOSFET
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