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SI3831DV Complex FET -7V -2.4A SOT-163/SOT23-6/TSOP-6 marking 31

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-7V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-7V
最大漏极电流Id
Drain Current
-2.4A
源漏极导通电阻Rds
Drain-Source On-State Resistance
240mΩ@ VGS = -2.5V, ID = -2A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.4V
耗散功率Pd
Power Dissipation
1.5W
Description & ApplicationsBi-Directional P-Channel MOSFET/Battery Switch Feature Low rSS(on) Symmetrical P-Channel MOSFET Rated for 2.5- to 12-V Operation Symmetrical 12-V Blocking (off) Voltage Solution for High-Side Battery Disconnect Switching (BDS) Supports Multiple Battery Applications Low Profile, Small Footprint TSOP-6 Package
描述与应用双向P沟道MOSFET/电池开关 特点 低RSS(上)对称的P沟道MOSFET 额定为2.5-12-V操作? 12-V对称封锁(关闭)电压 解决高侧电池断开开关(BDS) 支持多种电池应用 薄型,占地面积小TSOP-6封装
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