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FDN361AN MOSFET N-Channel 30V 1.8A SOT-23/SC-59 marking 361 low on-resistance/ultra highspeed switch/2.5Vdriver
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 1.8A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.1Ω/Ohm @1.1A,10v |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-3V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | N-Channel, Logic Level, PowerTrench General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Low gate charge ( 2.1nC typical ). • Fast switching speed. • High performance trench technology for extremely low RDS(on) .• High power version of industry standard SOT-23package. Identical pin out to SOT-23 with 30% higher power handling capability. |
| 描述与应用 | N沟道逻辑电平，的PowerTrench 概述 这N沟道逻辑电平MOSFET的生产采用 飞兆半导体的PowerTrench进程， 特别是针对已最大限度地减少通态电阻 但为保持低栅极电荷出色的开关 性能。 •低栅极电荷（2.1nC典型值）。 •快速开关速度。 •高性能沟道技术极 低RDS（on） •高功率版本的行业标准SOT-23package的。 相同的引脚SOT-23的30％更高的功率处理能力 |
