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FDN361AN MOSFET N-Channel 30V 1.8A SOT-23/SC-59 marking 361 low on-resistance/ultra highspeed switch/2.5Vdriver

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current1.8A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.1Ω/Ohm @1.1A,10v
开启电压Vgs(th) Gate-Source Threshold Voltage1-3V
耗散功率Pd Power Dissipation500mW/0.5W
Description & ApplicationsN-Channel, Logic Level, PowerTrench General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Low gate charge ( 2.1nC typical ). • Fast switching speed. • High performance trench technology for extremely low RDS(on) .• High power version of industry standard SOT-23package. Identical pin out to SOT-23 with 30% higher power handling capability.
描述与应用N沟道逻辑电平,的PowerTrench 概述 这N沟道逻辑电平MOSFET的生产采用 飞兆半导体的PowerTrench进程, 特别是针对已最大限度地减少通态电阻 但为保持低栅极电荷出色的开关 性能。 •低栅极电荷(2.1nC典型值)。 •快速开关速度。 •高性能沟道技术极 低RDS(on) •高功率版本的行业标准SOT-23package的。 相同的引脚SOT-23的30%更高的功率处理能力
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