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SSM6K411TU MOSFET N-Channel 20V 10A SOT-563/UF6 marking KNH low on-resistance/fast switch/low threshold voltage/low gate driver

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current10A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance12mΩ@ VGS = 4.5V, ID = 7A
开启电压Vgs(th) Gate-Source Threshold Voltage0.5~1.2V
耗散功率Pd Power Dissipation1W
Description & ApplicationsTOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications • 2.5-V drive • Low ON-resistance:RDS(ON) = 23.8 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 14.3 mΩ (max) (@VGS = 3.5 V) RDS(ON) = 12 mΩ (max) (@VGS = 4.5 V)
描述与应用东芝场效应晶体管的硅N沟道MOS类型 ○电源管理开关应用 ○高速开关应用 •2.5-V驱动器 •低导通电阻RDS(ON)=23.8MΩ(最大)(@ VGS=2.5 V) RDS(ON)= 14.3MΩ(最大)(@ VGS=3.5 V) RDS(ON)= 12MΩ(最大)(@ VGS=4.5 V)
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