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2N7002W MOSFET N-Channel 60V 115mA/0.115A SOT-323/SC-70 marking 72W low on-resistance/Low Gate Threshold Voltage/high impedance/fast switch

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Product description
最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current115mA/0.115A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance1.6Ω/Ohm @50mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsN-Channel Enhancement Mode Field Effect Transistor Features N-Channel Enhancement Mode Field Effect Transistor Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant
描述与应用N沟道增强型场效应晶体管 特性 N沟道增强型场效应晶体管 低导通电阻 低栅极阈值电压 低输入电容 开关速度快 低输入/输出漏 超小型表面贴装封装 无铅/ RoHS标准
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