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2N7002R-02-7 MOSFET N-Channel 60V 115mA/0.115A SOT-23/SC-59 marking K72 low on-resistance/Low Gate Threshold Voltage/high impedance/fast switch
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 115mA/0.115A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3.2Ω/Ohm @50mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.5V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Qualified to AEC-Q101 Standards for High Reliability |
| 描述与应用 | N沟道增强型场效应晶体管 特性 N沟道增强型场效应晶体管 低导通电阻 低栅极阈值电压 低输入电容 开关速度快 低输入/输出漏 铅，卤素和锑免费，符合RoHS标准 “绿色”设备 符合AEC-Q101高可靠性标准 |
