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2SD2240-R NPN Transistors(BJT) 150V 100mA/0.1A 150MHz 130~220 1V SOT-523/SC-75 marking PR high breakdown voltagelow noise amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 150V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 150V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 130~220 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 1V |
| 耗散功率Pc Power Dissipation | 125mW/0.125W |
| Description & Applications | Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Features High collector to emitter voltage VCEO. Low noise voltage NV. and automatic insertion through the tape packing |
| 描述与应用 | NPN硅外延平面型 对于高击穿电压的低频和低噪声放大 特点 高集电极发射极电压VCEO。 低噪声电压NV。 通过自动插入磁带包装 |
