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3SK224 MOSFET N-Channel 18V 25mA SOT-143 marking U94 low noise gain control amplifier/high power gain

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Product description
最大源漏极电压Vds Drain-Source Voltage18V
最大栅源极电压Vgs(±) Gate-Source Voltage8V
最大漏极电流Id Drain Current25mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage-1.5-0.5/-1-1V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD Features Silicon N-Channel Dual Gate MOS TYPE RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD Low Noise Figure: NF = 1.8 dB TYP. (f = 900 MHz) High Power Gain: GPS = 17 dB TYP. (f = 900 MHz) Suitable for use as RF amplifier in UHF TV tuner Automatically Mounting: Embossed Type Taping Small Package: 4 Pins Mini Mold
描述与应用MOS场效应晶体管 射频放大器。对于VHF/ CATV调谐器 N-沟道硅双栅MOS场效应晶体管 4引脚MINI模具 特性 硅N沟道双栅MOS型 UHF电视调谐器射频放大器 硅N沟道双栅MOS场效应晶体管 4引脚迷你模具 低噪声系数:NF= 1.8 dB(典型值)。 (六=900兆赫) 高功率增益:GPS= 17 dB典型值。 (六=900兆赫) 适合用于UHF电视调谐器中RF放大器 自动安装:压花类型大坪 小包装:4针脚小型模具
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