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EMB10 PNP+PNP Complex Bipolar Digital Transistor -50V -0.1A R1=2.2KΩ R2=47KΩ SOT-563/EMT6 marking B10 switching inverting interface driver circuit

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Product description

V(BR) CBO

Collector-Base Voltage

 -50V

V(BR) CEO

Collector-Emitter Voltage

 -50V
Collector Current(IC)  -100MA
 Input Resistance(R1)  2.2KΩ
Base-Emitter Resistance(R2)  47KΩ
Base-Emitter Input Resistance Ratio (R1/R2)  0.0468
DC Current Gain(hFE)  
Transtion Frequency(fT)  250MHZ
Power Dissipation (Pd)  0.15W
Description & Applications  1) Two DTA123J chips in a EMT package.
2) Dual PNP silicon transistor (each with two built in resistors)
Technical Documentation Download Read Online

 

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