EMB18 PNP+PNP Complex Bipolar Digital Transistor -50V -100mA 100~600 150mW/0.15W SOT-563/EMT6 marking B18 switching inverting interface driver circuit|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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EMB18 PNP+PNP Complex Bipolar Digital Transistor -50V -100mA 100~600 150mW/0.15W SOT-563/EMT6 marking B18 switching inverting interface driver circuit

Model：EMB18
Mark / screen / code / typing：B18
Manufacturer：
Date Code：05+
Package：SOT-563/EMT6
Standard Package：8000
Min Order：100

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Product description

V(BR) CBO Collector-Base Voltage	-50V
V(BR) CEO Collector-Emitter Voltage	-50V
Collector Current(IC)	-100MA
Input Resistance(R1)	22KΩ
Base-Emitter Resistance(R2)
Base-Emitter Input Resistance Ratio (R1/R2)
DC Current Gain(hFE)	100~600
Transtion Frequency(fT)	250mhz
Power Dissipation （Pd）	0.15W
Description & Applications	1) Two DTA124T chips in a EMT package. 2) Dual PNP silicon transistor (each with ONE built in resistors)
Technical Documentation Download	Read Online

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