IRF5803TR MOSFET P-Channel -40V -3.4A 0.112ohm SOT-163 marking G6 low on-resistance low gate charge|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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IRF5803TR MOSFET P-Channel -40V -3.4A 0.112ohm SOT-163 marking G6 low on-resistance low gate charge

Model：IRF5803TR
Mark / screen / code / typing：G6
Manufacturer：
Date Code：05+ 05+
Package：SOT-163/SOT23-6/TSOP-6
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-40V
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current	-3.4A
源漏极导通电阻Rds Drain-Source On-State Resistance	0.112Ω @-3.4A,-10V
开启电压Vgs（th） Gate-Source Threshold Voltage	-1.0--3V
耗散功率Pd Power Dissipation	2W
Description & Applications	Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
描述与应用	超低导通电阻 P沟道MOSFET 表面贴装可在磁带和卷轴低栅极电荷

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