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MTD20P03HDLT4 MOSFET P-Channel 30V 1.9A 0.09ohm SOT-23 marking 20P03HL

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Product description
最大源漏极电压Vds
Drain-Source Voltage
30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
30V
最大漏极电流Id
Drain Current
-1.9A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.09Ω @950mA,5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
1.0-2.0V
耗散功率Pd
Power Dissipation
7.5W
Description & ApplicationsFeatures • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Pb−Free Packages are Available
描述与应用•雪崩能量 •源漏二极管恢复时间等同于离散 快恢复二极管 •二极管的特性是桥电路中使用 •IDSS和VDS(上) 指定高温 •无铅包可用
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