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NTR1P02ELT1 MOSFET P-Channel -20V -400mA 0.55ohm SOT-23 marking PE high efficiency low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -0.4A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.55Ω @-200mA,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.1--2.83 |
| 耗散功率Pd Power Dissipation | 225mW/0.225W |
| Description & Applications | Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life RDSon = 0.80 , VGS = −10 V RDSon = 1.10 , VGS = −4.5 V • Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Package is Available |
| 描述与应用 | •低的RDS（on） 提供更高的效率和延长电池寿命 的RDSon，VGS=0.80= -10 V 导通电阻RDSon= 1.10，VGS=-4.5 V •微型SOT-23表面贴装封装节省电路板空间 •无铅包装是可用 |
