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PEMD48 NPN+PNP Complex Bipolar Digital Transistor 50V/-50V 100mA/-100mA 80/100 300mW/0.3W SOT-563/SOT666 marking 48 switching inverting interface driver circuit

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Product description
Collector-Base Voltage(VCBO) Q1/Q2 50V/-50V
Collector-Emitter Voltage(VCEO) Q1/Q2 50V/-50V
Collector Current(IC) Q1/Q2 100mA/-100mA
Q1 Input Resistance(R1) Q1/Q2 47KΩ/Ohm
Q1Base-Emitter Resistance(R2) 47KΩ/Ohm
Q1 Q1 Resistance Ratio 1
Q2 Input Resistance(R1) 2.2KΩ/Ohm
Q2Base-Emitter Resistance(R2) 47KΩ/Ohm
Q2(R1/R2) Q2 Resistance Ratio 0.047
 DC Current Gain(hFE) 80/100
Transtion Frequency(fT) Q1/Q2  
Power Dissipation Q1/Q2 300mW/0.3W
Description & Applications Features • PNP/PNP resistor-equipped transistors; • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Reduces number of components as replacement of two SC-75/SC-89 packaged transistors • Reduces required board space • Reduces pick and place costs • Self alignment during soldering due to straight leads APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver.
描述与应用 特点 •PNP / PNP电阻配备晶体管; •300 mW的总功耗 •非常小1.6毫米×1.2毫米×0.55毫米的超薄封装 •减少作为两个SC-75/SC-89包装晶体管的更换的部件数量 •减少所需的电路板空间 •减少取放成本 •自对准直引线在焊接过程中，由于 应用 •通用开关和放大 •逆变器和接口电路 •电路驱动。
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