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SI5504DC Complex FET 30V/-30V 2.9A/-2.1A 1206-8/vs-8 marking EA

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Product description
最大源漏极电压Vds
Drain-Source Voltage		30V/-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V/20V
最大漏极电流Id
Drain Current		2.9A/-2.1A
源漏极导通电阻Rds
Drain-Source On-State Resistance		143mΩ@ VGS =2.5V, ID =2.2A/290mΩ@ VGS =-4.5V, ID =-1.6A
开启电压Vgs（th）
Gate-Source Threshold Voltage		1V/-1V
耗散功率Pd
Power Dissipation		1.1W
Description & ApplicationsComplementary 30-V (D-S) MOSFET
描述与应用互补的 30-V（D-S）的MOSFET
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