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XP161A1265PR MOSFET P-Channel 20V 4A 0.042ohm SOT-89 marking 11 ultra high-speed switch low on-resistance built-in gate protection diode

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
-4A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.042Ω @2A,4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.7-1.4V
耗散功率Pd
Power Dissipation
2W
Description & ApplicationsFEATURES Low On-State Resistance : Rds(on) = 0.25Ω@ Vgs = -10V Rds(on) = 0.45Ω@ Vgs = -4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : -4.5V P-Channel Power MOSFET DMOS Structure Small Package : SOT-23
描述与应用低导通电阻:RDS(ON)=0.25Ω@ VGS=-10V 的Rds(on)=0.45Ω@ VGS=-4.5V 超高速开关 内置栅极保护二极管 驱动电压:-4.5V P沟道功率MOSFET DMOS结构式 小封装:SOT-23
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