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KTA2014E-GR PNP transistors(BJT) -50V -150mA/-0.15A 80MHz 200~400 -300mV/-0.3V SOT-523/ESM marking S6 switch/low noise

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
−150mA/-0.15A
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
100mW/0.1W
Description & ApplicationsPNP epitaxial planar transistor GENERAL PURPOSE APPLICATION SWITCHING APPLICATION FEATURE Excellent hFE Linearity Low Noise Complementary to KTC4075E Small Package
描述与应用PNP外延平面晶体管 通用应用 开关中的应用 特写 优秀HFE线性 低噪声 互补KTC4075E 小包装
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