EMX1DXV6T1 NPN+NPN Complex Bipolar Transistor 60V 100mA 120~560 SOT-563 marking 3X9 switch and digital circuit application|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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EMX1DXV6T1 NPN+NPN Complex Bipolar Transistor 60V 100mA 120~560 SOT-563 marking 3X9 switch and digital circuit application

Model：EMX1DXV6T1
Mark / screen / code / typing：3X9
Manufacturer：
Date Code：03+NOPB
Package：SOT-563
Standard Package：4000
Min Order：10

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Product description

V(BR) CBO Collector-Base Voltage	60V
V(BR) CEO Collector-Emitter Voltage	50V
Collector Current(IC)	100MA
Transtion Frequency(fT)	180MHZ
DC Current Gain(hFE)	120~560
VCE (sat) Collector-Emitter Saturation Voltage	0.4V
Power Dissipation （Pd）	0.5W
Description & Applications	Features • Dual NPN General Purpose Amplifier Transistor • Reduces Board Space • High hFE, 210−460 (Typical) • Low VCE(sat), < 0.5 V • These are Pb−Free Devices
Technical Documentation Download	Read Online

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