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2SD2240J-S NPN Transistors(BJT) 150V 50mA 150MHz 185~330 1V SOT-523/SC-75 marking PS high breakdown voltagelow noise amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 150V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 150V |
| 集电极连续输出电流IC Collector Current(IC) | 50mA |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 185~330 |
| 管压降VCE(sat) Collector-Emitter Saturation Voltage | 1V |
| 耗散功率Pc Power Dissipation | 125mW/0.125W |
| Description & Applications | Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SB1463J Features • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV |
| 描述与应用 | NPN硅外延平面型 对于高击穿电压低噪声放大 互补2SB1463J的 特点 •高集电极 - 发射极电压(基本打开)VCEO •低噪声电压NV |
