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2SD2240J-S NPN Transistors(BJT) 150V 50mA 150MHz 185~330 1V SOT-523/SC-75 marking PS high breakdown voltagelow noise amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
150V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
150V
集电极连续输出电流IC
Collector Current(IC)
50mA
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
185~330
管压降VCE(sat)
Collector-Emitter Saturation Voltage
1V
耗散功率Pc
Power Dissipation
125mW/0.125W
Description & ApplicationsSilicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SB1463J Features • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV
描述与应用NPN硅外延平面型 对于高击穿电压低噪声放大 互补2SB1463J的 特点 •高集电极 - 发射极电压(基本打开)VCEO •低噪声电压NV
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