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SI5473DC-T1 MOSFET P-Channel -12V -8.1A 22mohm 1206-8 marking B1SAD power MOSFET low on-resistance portable equipment load switch
| 最大源漏极电压Vds Drain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -8.1A/-0.1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 22mΩ@ VGS = -4.5V, ID = -5.9A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4V~-1.0V |
| 耗散功率Pd Power Dissipation | 2.5W |
| Description & Applications | P-Channel 12-V (D-S) MOSFET FEATURES *TrenchFET Power MOSFETS * Low rDS(on) and Excellent Power Handling In Compact Footprint APPLICATIONS *Battery and Load Switch for Portable Devices |
| 描述与应用 | P沟道12-V（D-S）的MOSFET 特点 *TrenchFET 功率MOSFET *低导通电阻 应用 *用于便携式设备的电池和负载开关 |
