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2SD2226K NPN Transistors(BJT) 60V 150mA/0.15A 250MHz 1200~2700 300mV/0.3V SOT-23/SC-59/SMT3 marking BJW

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)		 60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)		 50V
集电极连续输出电流IC
Collector Current(IC)		 150mA/0.15A
截止频率fT
Transtion Frequency(fT)		 250MHz
直流电流增益hFE
DC Current Gain(hFE)		 1200~2700
管压降VCE（sat）
Collector-Emitter Saturation Voltage		 300mV/0.3V
耗散功率Pc
Power Dissipation		 200mW/0.2W
Description & Applications General Purpose Transistor (50V, 0.15A) Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)
描述与应用 通用晶体管（50V，0.15A） 特点 1）高DC电流增益。 2）高发射基地电压。 （VCBO12V） 3）低饱和电压。 （典型值VCE（sat）=0.3V IC / IB=50mA/5mA）
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